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  Datasheet File OCR Text:
 LESHAN RADIO COMPANY, LTD.
General Purpose Transistors
PNP Silicon
3 COLLECTOR 2 BASE
BC807-16LT1 BC807-25LT1 BC807-40LT1
1 EMITTER
MAXIMUM RATINGS
Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current -- Continuous Symbol V CEO V CBO V
EBO
3 Value -45 -50 -5.0 -500 Unit V V V mAdc
1 2
CASE 318-08, STYLE 6 SOT-23 (TO-236AB)
IC
THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation FR- 5 Board, (1) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate, (2) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD 225 1.8 556 300 2.4 417 -55 to +150 mW mW/C C/W mW mW/C C/W C Max Unit
R JA PD
R JA T J , T stg
DEVICE MARKING
BC807-16LT1 = 5A; BC807-25LT1 = 5B; BC807-40LT1 = 5C
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted.)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage (IC = -10 mA) Collector-Emitter Breakdown Voltage (VEB = 0, I C = -10A) Emitter-Base Breakdown Voltage (IE = -1.0 A) Collector Cutoff Current (VCB = -20 V) (VCB = -20 V, T J = 150C) 1. FR-5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. V (BR)EBO I CBO -- -- -- -- -100 -5.0 nA A -5.0 -- -- V V (BR)CES -50 -- -- V V (BR)CEO -45 -- -- V
M1-1/2
LESHAN RADIO COMPANY, LTD.
BC807-16LT1 BC807-25LT1 BC807-40LT1
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued)
Characteristic Symbol Min Typ Max Unit
ON CHARACTERISTICS
DC Current Gain (IC= -100 mA, VCE = -1.0 V) h FE BC807-16 BC807-25 BC807-40 100 160 250 40 V CE(sat) -- -- -- -- -- -- 250 400 600 -- -0.7 V --
(IC = -500 mA, VCE = -1.0 V) Collector-Emitter Saturation Voltage (IC = -500 mA, IB = -50 mA) Base-Emitter On Voltage (IC = -500 mA, IB= -1.0 V)
V
BE(on)
--
--
-1.2
V
SMALL-SIGNAL CHARACTERISTICS
Current-Gain -- Bandwidth Product (IC = -10 mA, VCE = -5.0 Vdc, f = 100 MHz) Output Capacitance (VCB = -10 V, f = 1.0 MHz) fT C obo 100 -- -- 10 -- -- MHz pF
M1-2/2


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